Kingston KVR16N11/8-SP 8GB vs Corsair CMD8GX4M2B3200C16 4GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Corsair CMD8GX4M2B3200C16 4GB

Corsair CMD8GX4M2B3200C16 4GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

Corsair CMD8GX4M2B3200C16 4GB

需要考虑的原因
Corsair CMD8GX4M2B3200C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 26

左右 -8% 更低的延时
更快的读取速度，GB/s

19.5 13.9

测试中的平均数值
更快的写入速度，GB/s

16.3 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Corsair CMD8GX4M2B3200C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 24
读取速度，GB/s

13.9 19.5
写入速度，GB/s

9.5 16.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2432 3718

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMV16GX4M1A2400C16 16GB

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Samsung M471A1K43CB1-CRCR 8GB

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Kingston KHX2800C14D4/8GX 8GB

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Samsung 1600 CL10 Series 8GB

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Panram International Corporation PUD42400C154GNJW 4GB

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Corsair CMV4GX3M1B1600C11 4GB

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Crucial Technology BLS4G4S240FSD.M8FADM 4GB

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Kingston 9905471-002.A00LF 2GB

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Kingston 9905471-001.A01LF 2GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

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V-Color Technology Inc. TL48G26S8KRRGB16 8GB

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AMD AE34G1601U1 4GB

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Corsair CMK16GX4M2C3200C16 8GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

Corsair CMK32GX4M2D3200C16 16GB

Corsair CMK32GX4M2D3200C16 16GB