Kingston KVR16N11/8-SP 8GB vs Crucial Technology BL32G32C16U4B.M16FB1 32GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 28% 更低的延时

Crucial Technology BL32G32C16U4B.M16FB1 32GB

需要考虑的原因
Crucial Technology BL32G32C16U4B.M16FB1 32GB

报告一个错误

更快的读取速度，GB/s

17 13.9

测试中的平均数值
更快的写入速度，GB/s

15.2 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 36
读取速度，GB/s

13.9 17.0
写入速度，GB/s

9.5 15.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2432 3562

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

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Kingston HX424C15FB/16 16GB

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Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

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Corsair CMSX16GX4M1A2400C16 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Ramaxel Technology RMSA3260ME78HAF-2666 8GB

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Micron Technology 18ASF2G72PDZ-2G6D1 16GB

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Lexar Co Limited LD4AS008G-H2666GST 8GB

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A-DATA Technology AD73I1B1672EG 2GB

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G Skill Intl F4-4133C19-8GTZSWC 8GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Corsair CMK16GX4M2B3200C14 8GB

Corsair CMK16GX4M2B3200C14 8GB

Kingston 99U5469-045.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

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Apacer Technology 76.D305G.D060B 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BLS4G4D240FSC.8FBR2 4GB

Crucial Technology BLS4G4D240FSC.8FBR2 4GB