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Kingston KVR16N11/8-SP 8GB
Crucial Technology CT8G4SFS8213.M8FB 8GB

Kingston KVR16N11/8-SP 8GB vs Crucial Technology CT8G4SFS8213.M8FB 8GB

总分
star star star star star
Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分
star star star star star
Crucial Technology CT8G4SFS8213.M8FB 8GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

差异 规格 评论

差异

Kingston KVR16N11/8-SP 8GB 需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 34
    左右 24% 更低的延时
Crucial Technology CT8G4SFS8213.M8FB 8GB 需要考虑的原因
Crucial Technology CT8G4SFS8213.M8FB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 34
  • 读取速度，GB/s
    13.9 left arrow 14.0
  • 写入速度，GB/s
    9.5 left arrow 10.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2432 left arrow 2616

Kingston KVR16N11/8-SP 8GB RAM的比较

Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB

Crucial Technology CT8G4SFS8213.M8FB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Corsair CMW16GX4M2Z4000C18 8GB
Corsair CMW16GX4M2Z4000C18 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
内存RAM
Kingston HP536727-H41-ELD 4GB
Kingston HP536727-H41-ELD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-3000C15-8GTZ 8GB
G Skill Intl F4-3000C15-8GTZ 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Wilk Elektronik S.A. W-HK26S16G 16GB
Wilk Elektronik S.A. W-HK26S16G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4266C17-8GTZR 8GB
G Skill Intl F4-4266C17-8GTZR 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Corsair CMD32GX4M2B2800C14 16GB
Corsair CMD32GX4M2B2800C14 16GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
Crucial Technology BLS4G4D240FSA.M8FADG 4GB
Crucial Technology BLS4G4D240FSA.M8FADG 4GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMWX16GC3000C16W4D 16GB
Corsair CMWX16GC3000C16W4D 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Samsung M471A5143DB0-CPB 4GB
Samsung M471A5143DB0-CPB 4GB
内存RAM