Kingston KVR16N11/8-SP 8GB vs G Skill Intl F2-5300CL4-2GBPQ 2GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

G Skill Intl F2-5300CL4-2GBPQ 2GB

G Skill Intl F2-5300CL4-2GBPQ 2GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 53

左右 51% 更低的延时
更快的写入速度，GB/s

9.5 2,118.9

测试中的平均数值
更高的内存带宽，mbps

12800 5300

左右 2.42% 更高的带宽

G Skill Intl F2-5300CL4-2GBPQ 2GB

需要考虑的原因
G Skill Intl F2-5300CL4-2GBPQ 2GB

报告一个错误

更快的读取速度，GB/s

4 13.9

测试中的平均数值

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

G Skill Intl F2-5300CL4-2GBPQ 2GB

主要特点

存储器类型

DDR3 DDR2
PassMark中的延时，ns

26 53
读取速度，GB/s

13.9 4,292.6
写入速度，GB/s

9.5 2,118.9
内存带宽，mbps

12800 5300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC2-5300, SSTL 1.8V, CAS Supported: 4
时序/时钟速度

9-9-9-24 / 1600 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

2432 723

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C14-8GVKA 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-4266C17-16GVKB 16GB

G Skill Intl F4-4266C17-16GVKB 16GB