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Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3200C16-16GTZKO 16GB

Kingston KVR16N11/8-SP 8GB vs G Skill Intl F4-3200C16-16GTZKO 16GB

总分
star star star star star
Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB

差异 规格 评论

差异

Kingston KVR16N11/8-SP 8GB 需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
G Skill Intl F4-3200C16-16GTZKO 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZKO 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 26
    左右 -24% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3200C16-16GTZKO 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 21
  • 读取速度，GB/s
    13.9 left arrow 18.7
  • 写入速度，GB/s
    9.5 left arrow 14.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2432 left arrow 3437

Kingston KVR16N11/8-SP 8GB RAM的比较

Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB

G Skill Intl F4-3200C16-16GTZKO 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston MSI26D4S9D8ME-16 16GB
Kingston MSI26D4S9D8ME-16 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Kingston 9965643-006.A01G 8GB
Kingston 9965643-006.A01G 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR26D4S9D8MD-16 16GB
Kingston ACR26D4S9D8MD-16 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3200C16-16GTZKO 16GB
G Skill Intl F4-3200C16-16GTZKO 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Crucial Technology CB16GS2666.C8ET 16GB
Crucial Technology CB16GS2666.C8ET 16GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Kingston 99U5428-079.A00LF 8GB
Kingston 99U5428-079.A00LF 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Corsair CMD16GX4M4B3000C14 4GB
Corsair CMD16GX4M4B3000C14 4GB
内存RAM
Kingston 9905428-401.A00LF 8GB
Kingston 9905428-401.A00LF 8GB
Corsair CMK32GX4M2Z4000C18 16GB
Corsair CMK32GX4M2Z4000C18 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
内存RAM
Samsung M393B5170EH1-CH9 4GB
Samsung M393B5170EH1-CH9 4GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2400C15-4GRB 4GB
G Skill Intl F4-2400C15-4GRB 4GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Neo Forza NMUD480E86-3200 8GB
Neo Forza NMUD480E86-3200 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2400C17-8GVR 8GB
G Skill Intl F4-2400C17-8GVR 8GB
内存RAM