Kingston KVR16N11/8-SP 8GB vs G Skill Intl F4-3600C14-8GTZN 8GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

G Skill Intl F4-3600C14-8GTZN 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时

G Skill Intl F4-3600C14-8GTZN 8GB

需要考虑的原因
G Skill Intl F4-3600C14-8GTZN 8GB

报告一个错误

更快的读取速度，GB/s

19.1 13.9

测试中的平均数值
更快的写入速度，GB/s

13.7 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

13.9 19.1
写入速度，GB/s

9.5 13.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2432 3091

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T5663RZ3-CE6 2GB

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G Skill Intl F4-3200C15-8GVK 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Corsair CM2X1024-6400C4 1GB

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Kingston 9905701-006.A00G 16GB

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A-DATA Technology ADOVE1A0834E 1GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Smart Modular SF4641G8CK8I8GKSBG 8GB

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Corsair CMK16GX4M2Z3600C18 8GB

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Kingston 9905403-061.A00LF 2GB

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Samsung M378B5273DH0-CH9 4GB

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Panram International Corporation PUD42400C154GNJW 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

PUSKILL PJ16TFK1GM8 16GB

PUSKILL PJ16TFK1GM8 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Ramsta Ramsta-2400Mhz-8G 8GB

Ramsta Ramsta-2400Mhz-8G 8GB