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Kingston KVR16N11/8-SP 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
比较
Kingston KVR16N11/8-SP 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
总分
Kingston KVR16N11/8-SP 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
27
左右 4% 更低的延时
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
报告一个错误
更快的读取速度,GB/s
15.6
13.9
测试中的平均数值
更快的写入速度,GB/s
11.3
9.5
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Kingston KVR16N11/8-SP 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
27
读取速度,GB/s
13.9
15.6
写入速度,GB/s
9.5
11.3
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2432
2687
Kingston KVR16N11/8-SP 8GB RAM的比较
Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB RAM的比较
Crucial Technology CT51264BD160B.C16F 4GB
SpecTek Incorporated PSD34G13332 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M393A2K43BB1-CRC 16GB
Samsung M4 70T2864QZ3-CF7 1GB
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Crucial Technology CT8G4DFD824A.C16FBD1 8GB
报告一个错误
×
Bug description
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