Kingston KVR16N11/8-SP 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 41

左右 37% 更低的延时
更快的读取速度，GB/s

13.9 9.3

测试中的平均数值
更快的写入速度，GB/s

9.5 6.9

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 41
读取速度，GB/s

13.9 9.3
写入速度，GB/s

9.5 6.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2432 2044

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-4GVK 4GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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Corsair CMR64GX4M4C3200C16 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Apacer Technology 78.C1GMW.AUC0B 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Corsair CM4X4GD3000C16K2 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

Corsair CMY8GX3M2A2666C10 4GB

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Crucial Technology BLS8G4D30AESCK.M8FE 8GB

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Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

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A-DATA Technology DDR3 1333G 2GB

Corsair CM4X8GF3000C15K4 8GB

Corsair CM4X8GF3000C15K4 8GB