Kingston KVR16N11/8-SP 8GB vs Mushkin 99[2/7/4]204F 4GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

更快的读取速度，GB/s

13.9 13.4

测试中的平均数值

Mushkin 99[2/7/4]204F 4GB

需要考虑的原因
Mushkin 99[2/7/4]204F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 -4% 更低的延时
更快的写入速度，GB/s

11.5 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Mushkin 99[2/7/4]204F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 25
读取速度，GB/s

13.9 13.4
写入速度，GB/s

9.5 11.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2432 2825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Apacer Technology D22.2221ZA.001 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Micron Technology HMA81GU6AFR8N-UH 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Corsair CMH128GX4M4E3200C16 32GB

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Samsung M3 78T2863EHS-CF7 1GB

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Crucial Technology CT4G4DFS8213.C8FHP 4GB

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Samsung M471A1K43DB1-CTD 8GB

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G Skill Intl F4-3200C16-4GRB 4GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology CT8G4SFS824A.C8FDD1 8GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

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Kingston KF552C40-16 16GB

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Team Group Inc. TEAMGROUP-ED4-2400 16GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Kingston 9905665-017.A00G 4GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

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Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Corsair CMK16GX4M4B3866C18 4GB

Corsair CMK16GX4M4B3866C18 4GB

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Corsair CM4X16GE2666C16K2 16GB

Corsair CM4X16GE2666C16K2 16GB