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Kingston KVR16N11/8-SP 8GB
Panram International Corporation PUD43000C164G2NJK 4GB

Kingston KVR16N11/8-SP 8GB vs Panram International Corporation PUD43000C164G2NJK 4GB

总分
star star star star star
Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分
star star star star star
Panram International Corporation PUD43000C164G2NJK 4GB

Panram International Corporation PUD43000C164G2NJK 4GB

差异 规格 评论

差异

Kingston KVR16N11/8-SP 8GB 需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 30
    左右 13% 更低的延时
Panram International Corporation PUD43000C164G2NJK 4GB 需要考虑的原因
Panram International Corporation PUD43000C164G2NJK 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.9 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston KVR16N11/8-SP 8GB
Panram International Corporation PUD43000C164G2NJK 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 30
  • 读取速度，GB/s
    13.9 left arrow 15.9
  • 写入速度，GB/s
    9.5 left arrow 11.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2432 left arrow 2494

Kingston KVR16N11/8-SP 8GB RAM的比较

Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB

Panram International Corporation PUD43000C164G2NJK 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Panram International Corporation PUD43000C164G2NJK 4GB
Panram International Corporation PUD43000C164G2NJK 4GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Apacer Technology 78.CAGRN.40C0B 8GB
Apacer Technology 78.CAGRN.40C0B 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905598-025.A00G 8GB
Kingston 9905598-025.A00G 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Mushkin 99[2/7/4]204F 4GB
Mushkin 99[2/7/4]204F 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3600C16-8GTZ 8GB
G Skill Intl F4-3600C16-8GTZ 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Mushkin MRA4S320GJJM16G 16GB
Mushkin MRA4S320GJJM16G 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-2133C15-16GIS 16GB
G Skill Intl F4-2133C15-16GIS 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905701-020.A00G 16GB
Kingston 9905701-020.A00G 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Corsair CM4X8GC3000C15K4 8GB
Corsair CM4X8GC3000C15K4 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Crucial Technology BL16G32C16U4W.16FE 16GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Kingston 9905744-035.A00G 16GB
Kingston 9905744-035.A00G 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
内存RAM