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Kingston KVR16N11/8-SP 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
比较
Kingston KVR16N11/8-SP 8GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
总分
Kingston KVR16N11/8-SP 8GB
总分
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
71
左右 63% 更低的延时
更快的写入速度,GB/s
9.5
6.4
测试中的平均数值
需要考虑的原因
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
报告一个错误
更快的读取速度,GB/s
15.6
13.9
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Kingston KVR16N11/8-SP 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
71
读取速度,GB/s
13.9
15.6
写入速度,GB/s
9.5
6.4
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2432
1650
Kingston KVR16N11/8-SP 8GB RAM的比较
Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-3200C16-32GTZN 32GB
A-DATA Technology DQKD1A08 1GB
Apacer Technology 76.D305G.D390B 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
Kingston KVR16N11/8-SP 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology AFLD416EH1P 16GB
AMD R7S44G2606U1S 4GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Kingston 9905469-143.A00LF 4GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMK64GX4M4C3000C16 16GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Samsung M471A1G44AB0-CWE 8GB
Crucial Technology BLT8G4D26AFTA.16FBD 8GB
A-DATA Technology DDR4 2400 16GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-4400C18-8GTZRC 8GB
报告一个错误
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Bug description
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