Kingston KVR16N11/8-SP 8GB vs V-Color Technology Inc. TL48G30S8KSRGB15 8GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

V-Color Technology Inc. TL48G30S8KSRGB15 8GB

V-Color Technology Inc. TL48G30S8KSRGB15 8GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

V-Color Technology Inc. TL48G30S8KSRGB15 8GB

需要考虑的原因
V-Color Technology Inc. TL48G30S8KSRGB15 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 26

左右 -44% 更低的延时
更快的读取速度，GB/s

19.7 13.9

测试中的平均数值
更快的写入速度，GB/s

16.2 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

V-Color Technology Inc. TL48G30S8KSRGB15 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 18
读取速度，GB/s

13.9 19.7
写入速度，GB/s

9.5 16.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2432 3597

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M393B1K70QB0-CK0 8GB

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SK Hynix HMAA2GS6CJR8N-XN 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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SK Hynix HMA451R7AFR8N-TF 4GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Team Group Inc. 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Transcend Information TS2GSH64V1B 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston X2YH1K-MIE-NX 16GB

Kingston X2YH1K-MIE-NX 16GB

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Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Apacer Technology GD2.1527WC.001 8GB

Apacer Technology GD2.1527WC.001 8GB