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Kingston KVR16N11/8-SP 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
比较
Kingston KVR16N11/8-SP 8GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
总分
Kingston KVR16N11/8-SP 8GB
总分
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston KVR16N11/8-SP 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
74
左右 65% 更低的延时
更快的读取速度,GB/s
13.9
13.6
测试中的平均数值
更快的写入速度,GB/s
9.5
7.7
测试中的平均数值
需要考虑的原因
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
报告一个错误
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Kingston KVR16N11/8-SP 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
74
读取速度,GB/s
13.9
13.6
写入速度,GB/s
9.5
7.7
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2432
1616
Kingston KVR16N11/8-SP 8GB RAM的比较
Kingston HP32D4S2S1ME-4 4GB
Kingston HX316C10F/4 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMK16GX4M2K4500C19 8GB
Crucial Technology BL51264FN2001.Y16F 4GB
Elpida EBJ41UF8BCS0-DJ-F 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905624-010.A00G 4GB
Samsung M393B1K70QB0-CK0 8GB
Transcend Information TS1GSH64V1H 8GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CM4X16GE2666C16K2 16GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2400C15-8GRR 8GB
Kingston KVR16N11/8-SP 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMW16GX4M2C3600C18 8GB
报告一个错误
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