Kingston KVR533D2N4 512MB vs A-DATA Technology AD4S3200316G22-BHYD 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

A-DATA Technology AD4S3200316G22-BHYD 16GB

需要考虑的原因
A-DATA Technology AD4S3200316G22-BHYD 16GB

报告一个错误

低于PassMark测试中的延时，ns

66 75

左右 -14% 更低的延时
更快的读取速度，GB/s

13.9 1

测试中的平均数值
更快的写入速度，GB/s

13.2 1,672.1

测试中的平均数值
更高的内存带宽，mbps

25600 4200

左右 6.1 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

A-DATA Technology AD4S3200316G22-BHYD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 66
读取速度，GB/s

1,943.5 13.9
写入速度，GB/s

1,672.1 13.2
内存带宽，mbps

4200 25600

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

4-4-4-12 / 533 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

301 2429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMG16GX4M2E3200C16 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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SK Hynix HMA41GR7AFR4N-TF 8GB

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SK Hynix HYMP125S64CP8-S6 2GB

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Nanya Technology NT8GA64D88AX3S-HR 8GB

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Crucial Technology BLT4G3D1337DT1TX0. 4GB

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Apacer Technology 78.BAGNF.40C0B 4GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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G Skill Intl F4-2133C15-8GFX 8GB

G Skill Intl F4-2133C15-8GFX 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

Kingston 9905678-121.A00G 8GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Corsair CMK16GX4M2B3333C16 8GB

Corsair CMK16GX4M2B3333C16 8GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology BL16G32C16U4W.16FE 16GB