Kingston KVR533D2N4 512MB vs A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

需要考虑的原因
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 75

左右 -121% 更低的延时
更快的读取速度，GB/s

14.5 1

测试中的平均数值
更快的写入速度，GB/s

12.1 1,672.1

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 34
读取速度，GB/s

1,943.5 14.5
写入速度，GB/s

1,672.1 12.1
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

301 2756

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Hexon Technology Pte Ltd HEXON 1GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMU32GX4M4C3000C16 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston 8ATF1G64AZ-2G3A1 8GB

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Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

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Kingston KHX1866C9D3/8GX 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Crucial Technology BL8G26C16U4W.8FD 8GB

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A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT16G4SFD8266.C16FN 16GB

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Samsung M378B5773DH0-CH9 2GB

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Dust Leopard DDR4-2400 CL17 8GB 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB