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Kingston KVR533D2N4 512MB
Corsair CMD16GX4M2B3000C15 8GB

Kingston KVR533D2N4 512MB vs Corsair CMD16GX4M2B3000C15 8GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Corsair CMD16GX4M2B3000C15 8GB

Corsair CMD16GX4M2B3000C15 8GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Corsair CMD16GX4M2B3000C15 8GB 需要考虑的原因
Corsair CMD16GX4M2B3000C15 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 75
    左右 -159% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.1 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 4200
    左右 4.05 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Corsair CMD16GX4M2B3000C15 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 29
  • 读取速度，GB/s
    1,943.5 left arrow 18.2
  • 写入速度，GB/s
    1,672.1 left arrow 14.1
  • 内存带宽，mbps
    4200 left arrow 17000
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    301 left arrow 3353

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Corsair CMD16GX4M2B3000C15 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
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Corsair CMW256GX4M8E3200C16 32GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CMD16GX4M2B3000C15 8GB
Corsair CMD16GX4M2B3000C15 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M471B1G73QH0-YK0 8GB
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内存RAM
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内存RAM
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Corsair CMU32GX4M4D3000C16 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM