Kingston KVR533D2N4 512MB vs Corsair CMR32GX4M4C3333C16 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Corsair CMR32GX4M4C3333C16 8GB

Corsair CMR32GX4M4C3333C16 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Corsair CMR32GX4M4C3333C16 8GB

需要考虑的原因
Corsair CMR32GX4M4C3333C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 75

左右 -213% 更低的延时
更快的读取速度，GB/s

20 1

测试中的平均数值
更快的写入速度，GB/s

16.7 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Corsair CMR32GX4M4C3333C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 24
读取速度，GB/s

1,943.5 20.0
写入速度，GB/s

1,672.1 16.7
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 3990

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905701-022.A00G 16GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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G Skill Intl F5-5600J4040C16G 16GB

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Crucial Technology CT16G4DFD8213.C16FBD 16GB

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Kingston 99U5474-038.A00LF 4GB

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Samsung 1600 CL10 Series 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

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Kingston KHX1600C9D3/4GX 4GB

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Samsung SH5724G4UNC26P2-SC 32GB

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Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-2133C15-4GRR 4GB

G Skill Intl F4-2133C15-4GRR 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Kingston 8ATF1G64AZ-2G3A141 8GB

Kingston 8ATF1G64AZ-2G3A141 8GB