Kingston KVR533D2N4 512MB vs Corsair CMSX32GX4M2A2933C19 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Corsair CMSX32GX4M2A2933C19 16GB

Corsair CMSX32GX4M2A2933C19 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Corsair CMSX32GX4M2A2933C19 16GB

需要考虑的原因
Corsair CMSX32GX4M2A2933C19 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 75

左右 -150% 更低的延时
更快的读取速度，GB/s

17.2 1

测试中的平均数值
更快的写入速度，GB/s

15.1 1,672.1

测试中的平均数值
更高的内存带宽，mbps

23400 4200

左右 5.57 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Corsair CMSX32GX4M2A2933C19 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 30
读取速度，GB/s

1,943.5 17.2
写入速度，GB/s

1,672.1 15.1
内存带宽，mbps

4200 23400

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-23400, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

4-4-4-12 / 533 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

301 3428

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Corsair CMW32GX4M4Z4000C18 8GB

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Kingston 9965690-002.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

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Kingmax Semiconductor GLNG43F-18---------- 8GB

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Samsung M4 70T5663QZ3-CE6 2GB

Team Group Inc. TEAMGROUP-D4-3600 4GB

Team Group Inc. TEAMGROUP-D4-3600 4GB