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Kingston KVR533D2N4 512MB
Corsair CMT64GX4M2C3600C18 32GB
比较
Kingston KVR533D2N4 512MB vs Corsair CMT64GX4M2C3600C18 32GB
总分
Kingston KVR533D2N4 512MB
总分
Corsair CMT64GX4M2C3600C18 32GB
差异
规格
评论
差异
需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
需要考虑的原因
Corsair CMT64GX4M2C3600C18 32GB
报告一个错误
低于PassMark测试中的延时,ns
28
75
左右 -168% 更低的延时
更快的读取速度,GB/s
18.3
1
测试中的平均数值
更快的写入速度,GB/s
17.8
1,672.1
测试中的平均数值
更高的内存带宽,mbps
17000
4200
左右 4.05 更高的带宽
规格
完整的技术规格清单
Kingston KVR533D2N4 512MB
Corsair CMT64GX4M2C3600C18 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
75
28
读取速度,GB/s
1,943.5
18.3
写入速度,GB/s
1,672.1
17.8
内存带宽,mbps
4200
17000
Other
描述
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
4-4-4-12 / 533 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
301
4065
Kingston KVR533D2N4 512MB RAM的比较
Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
Corsair CMT64GX4M2C3600C18 32GB RAM的比较
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905471-081.A00LF 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Essencore Limited KD48GU881-26N190D 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965596-029.B00G 4GB
Kingston KVR533D2N4 512MB
Corsair CMT64GX4M2C3600C18 32GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Samsung DDR3 8GB 1600MHz 8GB
Samsung V-GeN D4S8GL24A8 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
AMD AE34G1601U1 4GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Dust Leopard DDR4-2400 C17 4GB 4GB
报告一个错误
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Bug description
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