Kingston KVR533D2N4 512MB vs Crucial Technology BL16G32C16U4B.M16FE 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Crucial Technology BL16G32C16U4B.M16FE 16GB

Crucial Technology BL16G32C16U4B.M16FE 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Crucial Technology BL16G32C16U4B.M16FE 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4B.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 75

左右 -159% 更低的延时
更快的读取速度，GB/s

18.8 1

测试中的平均数值
更快的写入速度，GB/s

15.7 1,672.1

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Crucial Technology BL16G32C16U4B.M16FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 29
读取速度，GB/s

1,943.5 18.8
写入速度，GB/s

1,672.1 15.7
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

301 3734

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CMT16GX4M2C3466C16 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingmax Semiconductor FLFF65F-C8KM9 4GB

Kingmax Semiconductor FLFF65F-C8KM9 4GB

Apacer Technology 78.CAGP7.C7C0B 8GB

Apacer Technology 78.CAGP7.C7C0B 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Kingston KDK8NX-MIE 16GB

Kingston KDK8NX-MIE 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

A-DATA Technology AO1P32MCST2-BZPS 16GB

A-DATA Technology AO1P32MCST2-BZPS 16GB