Kingston KVR533D2N4 512MB vs Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 75

左右 -257% 更低的延时
更快的读取速度，GB/s

17.9 1

测试中的平均数值
更快的写入速度，GB/s

13.7 1,672.1

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 21
读取速度，GB/s

1,943.5 17.9
写入速度，GB/s

1,672.1 13.7
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

301 2950

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston KVR533D2N4 512MB

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Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

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Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F4-3000C16-8GVSB 8GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

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Corsair CMV4GX3M1B1600C11 4GB

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Crucial Technology CB8GU2400.C8JT 8GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-2666C19-8GRS 8GB

G Skill Intl F4-2666C19-8GRS 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB