Kingston KVR533D2N4 512MB vs Essencore Limited KD4AGU880-36A180U 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Essencore Limited KD4AGU880-36A180U 16GB

Essencore Limited KD4AGU880-36A180U 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Essencore Limited KD4AGU880-36A180U 16GB

需要考虑的原因
Essencore Limited KD4AGU880-36A180U 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 75

左右 -168% 更低的延时
更快的读取速度，GB/s

18.2 1

测试中的平均数值
更快的写入速度，GB/s

15.8 1,672.1

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Essencore Limited KD4AGU880-36A180U 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 28
读取速度，GB/s

1,943.5 18.2
写入速度，GB/s

1,672.1 15.8
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

301 3727

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Essencore Limited KD4AGU880-36A180U 16GB

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Samsung M391B5673EH1-CH9 2GB

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Kingston 9905584-016.A00LF 4GB

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Kingston 9905471-006.A00LF 4GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

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Kingston 99U5403-465.A00LF 8GB

Kingston KMKYF9-HYA 8GB

Kingston KMKYF9-HYA 8GB

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Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-4000C18-16GTZR 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

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Micron Technology 18ASF2G72PDZ-2G3B1 16GB