Kingston KVR533D2N4 512MB vs G Skill Intl F4-3600C14-8GVKA 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

G Skill Intl F4-3600C14-8GVKA 8GB

G Skill Intl F4-3600C14-8GVKA 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

G Skill Intl F4-3600C14-8GVKA 8GB

需要考虑的原因
G Skill Intl F4-3600C14-8GVKA 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 75

左右 -226% 更低的延时
更快的读取速度，GB/s

24.4 1

测试中的平均数值
更快的写入速度，GB/s

19.7 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

G Skill Intl F4-3600C14-8GVKA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 23
读取速度，GB/s

1,943.5 24.4
写入速度，GB/s

1,672.1 19.7
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 4300

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SF4641G8CK8I6GKSEG 8GB

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Avant Technology W642GU42J5213N8 16GB

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AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Corsair CMK8GX4M2A2800C16 4GB

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Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Corsair CMK8GX4M2B3600C18 4GB

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Kingston 9905403-444.A00LF 4GB

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Corsair CM4X16GE2400C16S4 16GB

Corsair CM4X16GE2400C16S4 16GB

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Kingston KHX1866C10D3/4G 4GB

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Crucial Technology CT8G4SFS832A.C8FP 8GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

SK Hynix HMA81GU6DJR8N-VK 8GB

SK Hynix HMA81GU6DJR8N-VK 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingston KHX3600C18D4/32GX 32GB

Kingston KHX3600C18D4/32GX 32GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

Corsair CMR32GX4M4D3000C16 8GB

Corsair CMR32GX4M4D3000C16 8GB