Kingston KVR533D2N4 512MB vs G Skill Intl F4-4000C18-32GVK 32GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

G Skill Intl F4-4000C18-32GVK 32GB

G Skill Intl F4-4000C18-32GVK 32GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

G Skill Intl F4-4000C18-32GVK 32GB

需要考虑的原因
G Skill Intl F4-4000C18-32GVK 32GB

报告一个错误

低于PassMark测试中的延时，ns

28 75

左右 -168% 更低的延时
更快的读取速度，GB/s

17.8 1

测试中的平均数值
更快的写入速度，GB/s

16.1 1,672.1

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

G Skill Intl F4-4000C18-32GVK 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 28
读取速度，GB/s

1,943.5 17.8
写入速度，GB/s

1,672.1 16.1
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

301 3848

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMN32GX4M2Z3600C18 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingston K1N7HK-ELC 2GB

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Corsair CMK8GX4M2A2400C14 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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G Skill Intl F4-4000C19-8GTZSW 8GB

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Kingston 99U5474-028.A00LF 4GB

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Kingston 9905624-004.A00G 4GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

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G Skill Intl F4-4400C19-32GTRS 32GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Corsair CM4B8G7L2666A16K2-O 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Corsair CMR32GX4M2C3000C16 16GB

Corsair CMR32GX4M2C3000C16 16GB