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Kingston KVR533D2N4 512MB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
比较
Kingston KVR533D2N4 512MB vs InnoDisk Corporation M4S0-4GSSNCSJ 4GB
总分
Kingston KVR533D2N4 512MB
总分
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
低于PassMark测试中的延时,ns
75
86
左右 13% 更低的延时
需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
报告一个错误
更快的读取速度,GB/s
12.1
1
测试中的平均数值
更快的写入速度,GB/s
5.7
1,672.1
测试中的平均数值
更高的内存带宽,mbps
19200
4200
左右 4.57 更高的带宽
规格
完整的技术规格清单
Kingston KVR533D2N4 512MB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
75
86
读取速度,GB/s
1,943.5
12.1
写入速度,GB/s
1,672.1
5.7
内存带宽,mbps
4200
19200
Other
描述
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
4-4-4-12 / 533 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
301
1220
Kingston KVR533D2N4 512MB RAM的比较
Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KHX1600C9D3/8G 8GB
Avant Technology J642GU42J9266N4 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston 9905625-030.A00G 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Essencore Limited KD4AGSA8A-32N2200 16GB
Kingston 99U5428-018.A00LF 8GB
G Skill Intl F4-3600C17-8GTRG 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston HP32D4U2S8ME-16 16GB
Samsung M391B5673EH1-CH9 2GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMD32GX4M2C3200C14M 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair CMW16GX4M2K4266C19 8GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMK8GX4M1D3000C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
AMD R534G1601U1S-UO 4GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
A-DATA Technology DDR2 800G 2GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
报告一个错误
×
Bug description
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