Kingston KVR533D2N4 512MB vs Kingston KHX3200C18D4/16G 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Kingston KHX3200C18D4/16G 16GB

Kingston KHX3200C18D4/16G 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Kingston KHX3200C18D4/16G 16GB

需要考虑的原因
Kingston KHX3200C18D4/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 75

左右 -178% 更低的延时
更快的读取速度，GB/s

19.1 1

测试中的平均数值
更快的写入速度，GB/s

15.2 1,672.1

测试中的平均数值
更高的内存带宽，mbps

25600 4200

左右 6.1 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Kingston KHX3200C18D4/16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 27
读取速度，GB/s

1,943.5 19.1
写入速度，GB/s

1,672.1 15.2
内存带宽，mbps

4200 25600

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

4-4-4-12 / 533 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

301 3737

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3466C16-8GTZSW 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Samsung M471A5143SB1-CRC 4GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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AMD R5316G1609U2K 8GB

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Corsair CMD16GX4M4B3300C16 4GB