Kingston KVR533D2N4 512MB vs Kingston XF875V-HYA 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Kingston XF875V-HYA 8GB

Kingston XF875V-HYA 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Kingston XF875V-HYA 8GB

需要考虑的原因
Kingston XF875V-HYA 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 75

左右 -92% 更低的延时
更快的读取速度，GB/s

13.3 1

测试中的平均数值
更快的写入速度，GB/s

11.4 1,672.1

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Kingston XF875V-HYA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 39
读取速度，GB/s

1,943.5 13.3
写入速度，GB/s

1,672.1 11.4
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

301 2274

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Kingston 9965662-016.A00G 16GB

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Samsung M393A2K43BB1-CRCA1 16GB

Samsung M393A2K43BB1-CRCA1 16GB

SK Hynix HMT451S6DFR8A-PB 4GB

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Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Crucial Technology CT102464BA160B.M16 8GB

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SK Hynix GKE800UD102408-2133 8GB

SK Hynix GKE800UD102408-2133 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

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