Kingston KVR533D2N4 512MB vs Micron Technology 36ASF2G72LZ-2G1A1 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Micron Technology 36ASF2G72LZ-2G1A1 16GB

需要考虑的原因
Micron Technology 36ASF2G72LZ-2G1A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 75

左右 -142% 更低的延时
更快的读取速度，GB/s

11.4 1

测试中的平均数值
更快的写入速度，GB/s

8.8 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 31
读取速度，GB/s

1,943.5 11.4
写入速度，GB/s

1,672.1 8.8
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 2371

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Samsung M378B1G73EB0-CK0 8GB

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G Skill Intl F4-3300C16-8GTZSW 8GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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G Skill Intl F4-3200C16-4GTZ 4GB

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Kingston ACR256X64D3S1333C9 2GB

Corsair CMK8GX4M2A2400C16 4GB

Corsair CMK8GX4M2A2400C16 4GB

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Kingston KF552C40-16 16GB

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Kingston 9905625-075.A00G 16GB

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Kingston 9905624-007.A00G 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

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