Kingston KVR533D2N4 512MB vs Micron Technology 8ATF51264AZ-2G1A1 4GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Micron Technology 8ATF51264AZ-2G1A1 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A1 4GB

报告一个错误

低于PassMark测试中的延时，ns

43 75

左右 -74% 更低的延时
更快的读取速度，GB/s

12.2 1

测试中的平均数值
更快的写入速度，GB/s

9.7 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Micron Technology 8ATF51264AZ-2G1A1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 43
读取速度，GB/s

1,943.5 12.2
写入速度，GB/s

1,672.1 9.7
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 2501

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT325U6CFR8C-PB 2GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Micron Technology 8ATF51264AZ-2G1A1 4GB

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Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

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SK Hynix HMT42GR7AFR4C-RD 16GB

G Skill Intl F4-4400C18-8GTRG 8GB

G Skill Intl F4-4400C18-8GTRG 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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Crucial Technology BLS8G4D32AESEK.M8FE 8GB

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