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Kingston KVR533D2N4 512MB
Mushkin MR[A/B]280HHHH16G 16GB

Kingston KVR533D2N4 512MB vs Mushkin MR[A/B]280HHHH16G 16GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Mushkin MR[A/B]280HHHH16G 16GB

Mushkin MR[A/B]280HHHH16G 16GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Mushkin MR[A/B]280HHHH16G 16GB 需要考虑的原因
Mushkin MR[A/B]280HHHH16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 75
    左右 -241% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 4200
    左右 4.05 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Mushkin MR[A/B]280HHHH16G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 22
  • 读取速度，GB/s
    1,943.5 left arrow 18.4
  • 写入速度，GB/s
    1,672.1 left arrow 14.4
  • 内存带宽，mbps
    4200 left arrow 17000
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    301 left arrow 3394

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Mushkin MR[A/B]280HHHH16G 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
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Kingston KHX1600C10D3/8G 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Mushkin MR[A/B]280HHHH16G 16GB
Mushkin MR[A/B]280HHHH16G 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
Kingston 99U5429-007.A00LF 2GB
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Patriot Memory (PDP Systems) 3866 C18 Series 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
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Crucial Technology CT8G4DFRA266.C8FE 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
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Panram International Corporation PUD43000C154G4NJW 4GB
内存RAM
Kingston 9905471-006.A01LF 4GB
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Crucial Technology CT8G4SFS8266.M8FE 8GB
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内存RAM
Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology 78.B1GET.AU00C 4GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Apacer Technology D12.2326WH.001 16GB
Apacer Technology D12.2326WH.001 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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内存RAM
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Kingston 99U5474-028.A00LF 4GB
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G Skill Intl F4-3600C19-8GSXW 8GB
内存RAM
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Kingston KHX1600C9D3/4G 4GB
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Corsair CMW32GX4M4C3600C18 8GB
内存RAM