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Kingston KVR533D2N4 512MB
Patriot Memory (PDP Systems) PSD416G320081 16GB

Kingston KVR533D2N4 512MB vs Patriot Memory (PDP Systems) PSD416G320081 16GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Patriot Memory (PDP Systems) PSD416G320081 16GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Patriot Memory (PDP Systems) PSD416G320081 16GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD416G320081 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 75
    左右 -134% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.2 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 4200
    左右 6.1 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Patriot Memory (PDP Systems) PSD416G320081 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 32
  • 读取速度，GB/s
    1,943.5 left arrow 18.9
  • 写入速度，GB/s
    1,672.1 left arrow 15.2
  • 内存带宽，mbps
    4200 left arrow 25600
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    301 left arrow 3621

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Patriot Memory (PDP Systems) PSD416G320081 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM