Kingston KVR533D2N4 512MB vs Samsung M378A1K43EB2-CVF 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Samsung M378A1K43EB2-CVF 8GB

需要考虑的原因
Samsung M378A1K43EB2-CVF 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 75

左右 -168% 更低的延时
更快的读取速度，GB/s

17.4 1

测试中的平均数值
更快的写入速度，GB/s

14.5 1,672.1

测试中的平均数值
更高的内存带宽，mbps

23400 4200

左右 5.57 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Samsung M378A1K43EB2-CVF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 28
读取速度，GB/s

1,943.5 17.4
写入速度，GB/s

1,672.1 14.5
内存带宽，mbps

4200 23400

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

4-4-4-12 / 533 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

301 3419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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SK Hynix HMT451S6BFR8A-PB 4GB

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A-DATA Technology DDR3L 1333G 4GB

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Maxsun MSD44G24Q3 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Crucial Technology BLS16G4D240FSE.16FAD 16GB

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Corsair CMT32GX5M2X5600C36 16GB

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Crucial Technology 16G4UD2400.C16BD1 16GB

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AMD AE34G2139U2 4GB

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Corsair CM4X4GD3000C15K4 4GB

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Kingston 9905471-002.A00LF 2GB

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G Skill Intl F4-3466C16-16GTZ 16GB

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Kingston 9905471-002.A00LF 2GB

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Crucial Technology CT4G4SFS8213.C8FADP 4GB

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Samsung M471B5273DH0-CH9 4GB

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G Skill Intl F4-3000C15-8GRKB 8GB

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Kingston 99U5474-023.A00LF 4GB

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Kingston 9905630-052.A00G 16GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CMU16GX4M2C3000C15 8GB

Corsair CMU16GX4M2C3000C15 8GB

Kingston 9905469-143.A00LF 4GB

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Corsair CMK32GX4M2D3600C16 16GB

Corsair CMK32GX4M2D3600C16 16GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB