Kingston KVR533D2N4 512MB vs SK Hynix HMA82GS6DJR8N-XN 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

SK Hynix HMA82GS6DJR8N-XN 16GB

SK Hynix HMA82GS6DJR8N-XN 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

SK Hynix HMA82GS6DJR8N-XN 16GB

需要考虑的原因
SK Hynix HMA82GS6DJR8N-XN 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 75

左右 -103% 更低的延时
更快的读取速度，GB/s

15.3 1

测试中的平均数值
更快的写入速度，GB/s

12.9 1,672.1

测试中的平均数值
更高的内存带宽，mbps

25600 4200

左右 6.1 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

SK Hynix HMA82GS6DJR8N-XN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 37
读取速度，GB/s

1,943.5 15.3
写入速度，GB/s

1,672.1 12.9
内存带宽，mbps

4200 25600

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

4-4-4-12 / 533 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

301 2973

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965525-140.A00LF 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Micron Technology 18ASF2G72PZ-2G3B1 16GB

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Corsair VS2GB1333D4 2GB

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ATP Electronics Inc. A4G08QA8BNPBSE 8GB

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Samsung M378T5663QZ3-CF7 2GB

Corsair CMT16GX4M2Z3200C16 8GB

Corsair CMT16GX4M2Z3200C16 8GB