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Kingston KVR800D2N6/2G 2GB
Corsair CMK16GX4M2B3200C14 8GB

Kingston KVR800D2N6/2G 2GB vs Corsair CMK16GX4M2B3200C14 8GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Corsair CMK16GX4M2B3200C14 8GB

Corsair CMK16GX4M2B3200C14 8GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 18.2
    测试中的平均数值
Corsair CMK16GX4M2B3200C14 8GB 需要考虑的原因
Corsair CMK16GX4M2B3200C14 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 50
    左右 -127% 更低的延时
  • 更快的写入速度，GB/s
    13.9 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Corsair CMK16GX4M2B3200C14 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 22
  • 读取速度，GB/s
    5,143.3 left arrow 18.2
  • 写入速度，GB/s
    1,905.1 left arrow 13.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    855 left arrow 3138

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Corsair CMK16GX4M2B3200C14 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
G Skill Intl F4-4266C19-8GTZKW 8GB
G Skill Intl F4-4266C19-8GTZKW 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMW64GX4M8A2666C16 8GB
Corsair CMW64GX4M8A2666C16 8GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMD8GX4M2B3600C18 4GB
Corsair CMD8GX4M2B3600C18 4GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Apacer Technology GD2.11173T.001 4GB
Apacer Technology GD2.11173T.001 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMW8GX4M1Z3200C16 8GB
Corsair CMW8GX4M1Z3200C16 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3200C16-8GTZB 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston HP32D4S2S8ME-16 16GB
Kingston HP32D4S2S8ME-16 16GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905734-018.A00G 16GB
Kingston 9905734-018.A00G 16GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Kingston K6VDX7-MIE 8GB
Kingston K6VDX7-MIE 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Mushkin MRA4S266GHHF32G 32GB
Mushkin MRA4S266GHHF32G 32GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
V-GEN D4H16GS24A8 16GB
V-GEN D4H16GS24A8 16GB
内存RAM