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Kingston KVR800D2N6/2G 2GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Kingston KVR800D2N6/2G 2GB vs Crucial Technology BLS4G4D26BFSB.8FD2 4GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 21.1
    测试中的平均数值
Crucial Technology BLS4G4D26BFSB.8FD2 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 50
    左右 -178% 更低的延时
  • 更快的写入速度，GB/s
    16.7 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 18
  • 读取速度，GB/s
    5,143.3 left arrow 21.1
  • 写入速度，GB/s
    1,905.1 left arrow 16.7
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    855 left arrow 3286

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston KF552C40-16 16GB
Kingston KMKYF9-MID 8GB
Kingston KMKYF9-MID 8GB
内存RAM