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Kingston KVR800D2N6/2G 2GB
Crucial Technology CT8G4SFS632A.M4FE 8GB

Kingston KVR800D2N6/2G 2GB vs Crucial Technology CT8G4SFS632A.M4FE 8GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Crucial Technology CT8G4SFS632A.M4FE 8GB

Crucial Technology CT8G4SFS632A.M4FE 8GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 18.3
    测试中的平均数值
Crucial Technology CT8G4SFS632A.M4FE 8GB 需要考虑的原因
Crucial Technology CT8G4SFS632A.M4FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 50
    左右 -2% 更低的延时
  • 更快的写入速度，GB/s
    12.1 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 49
  • 读取速度，GB/s
    5,143.3 left arrow 18.3
  • 写入速度，GB/s
    1,905.1 left arrow 12.1
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2801

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT8G4SFS632A.M4FE 8GB RAM的比较

Kingston 9905403-090.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Kingston KHYXPX-MIE 8GB
Kingston KHYXPX-MIE 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA81GU6MFR8N-UH 8GB
SK Hynix HMA81GU6MFR8N-UH 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905703-009.A00G 16GB
Kingston 9905703-009.A00G 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-4133C19-8GTZC 8GB
G Skill Intl F4-4133C19-8GTZC 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK32GX4M2A2666C16 16GB
Corsair CMK32GX4M2A2666C16 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Corsair CMU32GX4M2C3000C16 16GB
Corsair CMU32GX4M2C3000C16 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMWB8G1L3200K16W4 8GB
Corsair CMWB8G1L3200K16W4 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMWX16GC3000C15W4 16GB
Corsair CMWX16GC3000C15W4 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CM4X16GE2133C13K8 16GB
Corsair CM4X16GE2133C13K8 16GB
内存RAM