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Kingston KVR800D2N6/2G 2GB
Essencore Limited KD4AGS88A-26N1600 16GB

Kingston KVR800D2N6/2G 2GB vs Essencore Limited KD4AGS88A-26N1600 16GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 15.6
    测试中的平均数值
Essencore Limited KD4AGS88A-26N1600 16GB 需要考虑的原因
Essencore Limited KD4AGS88A-26N1600 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 50
    左右 -56% 更低的延时
  • 更快的写入速度，GB/s
    10.9 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Essencore Limited KD4AGS88A-26N1600 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 32
  • 读取速度，GB/s
    5,143.3 left arrow 15.6
  • 写入速度，GB/s
    1,905.1 left arrow 10.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    855 left arrow 2890

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Essencore Limited KD4AGS88A-26N1600 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
内存RAM
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Kingston 9905624-045.A00G 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
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Crucial Technology BL8G32C16U4W.M8FE 8GB
内存RAM
Samsung M393B1K70CHD-CH9 8GB
Samsung M393B1K70CHD-CH9 8GB
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内存RAM
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Kingmax Semiconductor FLFE85F-C8KM9 2GB
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Crucial Technology CT16G4DFD8213.C16FH1 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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G Skill Intl F4-3600C16-8GTRGC 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
内存RAM
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-6000J3636F16G 16GB
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Micron Technology 8ATF1G64HZ-2G6B1 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
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G Skill Intl F4-4266C19-8GTRG 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
AMD R744G2400U1S 4GB
AMD R744G2400U1S 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-16GVK 16GB
G Skill Intl F4-3200C16-16GVK 16GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
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Crucial Technology CB8GU2400.C8JT 8GB
内存RAM
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Kingston 9905316-106.A02LF 1GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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Neo Forza NMUD480E82-3600 8GB
内存RAM