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Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C14-8GVR 8GB

Kingston KVR800D2N6/2G 2GB vs G Skill Intl F4-3200C14-8GVR 8GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
G Skill Intl F4-3200C14-8GVR 8GB

G Skill Intl F4-3200C14-8GVR 8GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 20.6
    测试中的平均数值
G Skill Intl F4-3200C14-8GVR 8GB 需要考虑的原因
G Skill Intl F4-3200C14-8GVR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 50
    左右 -117% 更低的延时
  • 更快的写入速度，GB/s
    16.2 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C14-8GVR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 23
  • 读取速度，GB/s
    5,143.3 left arrow 20.6
  • 写入速度，GB/s
    1,905.1 left arrow 16.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    855 left arrow 3819

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3200C14-8GVR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C14-8GVR 8GB
G Skill Intl F4-3200C14-8GVR 8GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Teclast TLD416G26A30 16GB
Teclast TLD416G26A30 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3600C14-16GTRS 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Kingston 99U5712-009.A00G 16GB
Kingston 99U5712-009.A00G 16GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston 9905702-121.A00G 8GB
Kingston 9905702-121.A00G 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA81GS6CJR8N-VK 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMD16GX4M2B3200C14 8GB
Corsair CMD16GX4M2B3200C14 8GB
内存RAM