Kingston KVR800D2N6/2G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

总分

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

差异规格评论

差异

Kingston KVR800D2N6/2G 2GB

需要考虑的原因
Kingston KVR800D2N6/2G 2GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 50

左右 -11% 更低的延时
更快的读取速度，GB/s

6.9 5

测试中的平均数值
更快的写入速度，GB/s

6.3 1,905.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston KVR800D2N6/2G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 45
读取速度，GB/s

5,143.3 6.9
写入速度，GB/s

1,905.1 6.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, TBD2 V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

855 1499

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M1Z3600C18 16GB

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Patriot Memory (PDP Systems) 2400 C14 Series 8GB

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Kingston 9905403-444.A00LF 4GB

Corsair CM4X16GC3000C16K4D 16GB

Corsair CM4X16GC3000C16K4D 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingston KHX4266C19D4/8GX 8GB

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-2933C14-16GTZRX 16GB

G Skill Intl F4-2933C14-16GTZRX 16GB

Kingston 9905471-002.A00LF 2GB

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Crucial Technology CT16G4SFS832A.C8FE 16GB

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