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Kingston KVR800D2N6/2G 2GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingston KVR800D2N6/2G 2GB vs Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 66
    左右 24% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 15.1
    测试中的平均数值
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB 需要考虑的原因
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
报告一个错误
  • 更快的写入速度，GB/s
    7.1 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 66
  • 读取速度，GB/s
    5,143.3 left arrow 15.1
  • 写入速度，GB/s
    1,905.1 left arrow 7.1
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    855 left arrow 1820

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
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Smart Modular SG564568FG8N6KF-Z2 2GB
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Samsung M471A5244CB0-CRC 4GB
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
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G Skill Intl F4-3000C15-8GRRB 8GB
内存RAM
Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273CH0-CH9 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
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内存RAM
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Corsair CMSX32GX4M2A3200C22 16GB
G Skill Intl F4-2133C15-4GRB 4GB
G Skill Intl F4-2133C15-4GRB 4GB
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A-DATA Technology ADOVE1A0834E 1GB
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内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
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Kingston ACR32D4U2S8ME-16 16GB
内存RAM
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Kingston 99U5403-036.A00G 4GB
Corsair CMV16GX4M1L2400C16 16GB
Corsair CMV16GX4M1L2400C16 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C14-16GVK 16GB
G Skill Intl F4-3000C14-16GVK 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Micron Technology 36ASF4G72PZ-2G1A1 32GB
内存RAM
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Kingston 9965433-034.A00LF 4GB
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Corsair CMH128GX4M4E3200C16 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung M378A2G43AB3-CWE 16GB
Samsung M378A2G43AB3-CWE 16GB
内存RAM