Kingston KVR800D2N6/2G 2GB vs Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

总分

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

差异规格评论

差异

Kingston KVR800D2N6/2G 2GB

需要考虑的原因
Kingston KVR800D2N6/2G 2GB

报告一个错误

更快的读取速度，GB/s

5 19.6

测试中的平均数值

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 50

左右 -117% 更低的延时
更快的写入速度，GB/s

18.8 1,905.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Kingston KVR800D2N6/2G 2GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 23
读取速度，GB/s

5,143.3 19.6
写入速度，GB/s

1,905.1 18.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

855 4095

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Team Group Inc. TEAMGROUP-UD4-3733 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Crucial Technology 8G4US2400.M8B1 8GB

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SK Hynix HMT351R7EFR8C-RD 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

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G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

A-DATA Technology AO2P21FC4R1-BRFS 4GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Corsair CM4B8G1J2400A16K2-ON 8GB

Corsair CM4B8G1J2400A16K2-ON 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB