RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston KVT8FP-HYC 4GB
DSL Memory D4SS1G081SH24A-A 8GB

Kingston KVT8FP-HYC 4GB vs DSL Memory D4SS1G081SH24A-A 8GB

总分
star star star star star
Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

总分
star star star star star
DSL Memory D4SS1G081SH24A-A 8GB

DSL Memory D4SS1G081SH24A-A 8GB

差异 规格 评论

差异

Kingston KVT8FP-HYC 4GB 需要考虑的原因
Kingston KVT8FP-HYC 4GB
报告一个错误
  • 更快的写入速度，GB/s
    9.6 left arrow 7.0
    测试中的平均数值
DSL Memory D4SS1G081SH24A-A 8GB 需要考虑的原因
DSL Memory D4SS1G081SH24A-A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 40
    左右 -82% 更低的延时
  • 更快的读取速度，GB/s
    14.6 left arrow 14.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston KVT8FP-HYC 4GB
DSL Memory D4SS1G081SH24A-A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 22
  • 读取速度，GB/s
    14.4 left arrow 14.6
  • 写入速度，GB/s
    9.6 left arrow 7.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2432 left arrow 2313

Kingston KVT8FP-HYC 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingmax Semiconductor FLGF65F-C8KL9A 4GB

DSL Memory D4SS1G081SH24A-A 8GB RAM的比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F4-2400C17-16GIS 16GB
G Skill Intl F4-2400C17-16GIS 16GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
DSL Memory D4SS1G081SH24A-A 8GB
DSL Memory D4SS1G081SH24A-A 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-4400C18-8GTZR 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
内存RAM
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-4000C18-16GVK 16GB
G Skill Intl F4-4000C18-16GVK 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix HMA81GS6CJRJR-VK 8GB
SK Hynix HMA81GS6CJRJR-VK 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Samsung M393A1G40EB1-CRC 8GB
Samsung M393A1G40EB1-CRC 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-4400C18-8GTZR 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
内存RAM
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Super Talent F3200UA8G 8GB
Super Talent F3200UA8G 8GB
内存RAM