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Kingston MSI26D4S9D8ME-16 16GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Kingston MSI26D4S9D8ME-16 16GB vs Micron Technology 18ASF2G72PDZ-2G6D1 16GB

总分
star star star star star
Kingston MSI26D4S9D8ME-16 16GB

Kingston MSI26D4S9D8ME-16 16GB

总分
star star star star star
Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

差异 规格 评论

差异

Kingston MSI26D4S9D8ME-16 16GB 需要考虑的原因
Kingston MSI26D4S9D8ME-16 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.4 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 8.9
    测试中的平均数值
Micron Technology 18ASF2G72PDZ-2G6D1 16GB 需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 36
    左右 -13% 更低的延时

规格

完整的技术规格清单
Kingston MSI26D4S9D8ME-16 16GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 32
  • 读取速度，GB/s
    15.4 left arrow 10.5
  • 写入速度，GB/s
    10.8 left arrow 8.9
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2720 left arrow 2386

Kingston MSI26D4S9D8ME-16 16GB RAM的比较

Samsung M471A2K43DB1-CWE 16GB
Micron Technology AFLD48EH1P 8GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston MSI26D4S9D8ME-16 16GB
Kingston MSI26D4S9D8ME-16 16GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Corsair CM4X8GE2400C16K4 8GB
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Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3600C14-8GTZNB 8GB
G Skill Intl F4-3600C14-8GTZNB 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
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Kingston 9905678-102.A00G 8GB
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Corsair CMW256GX4M8E3200C16 32GB
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
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Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 8ATF1G64HZ-2G3B2 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
内存RAM
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Crucial Technology CT16G4SFD8266.M16FE 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
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A-DATA Technology AO1P26KC8T1-BXPS 8GB
内存RAM
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Corsair CMX4GX3M2A1600C9 2GB
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Kingston 9965698-001.A00G 16GB
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Smart Modular SH564128FH8NZQNSCG 4GB
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G Skill Intl F4-4000C16-16GVKA 16GB
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Smart Modular SH564128FH8NZQNSCG 4GB
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Corsair CMR32GX4M4D3000C16 8GB
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