Kingston SNY1600S11-4G-EDEG 4GB vs Corsair CMG64GX4M2D3600C18 32GB

总分

Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

总分

Corsair CMG64GX4M2D3600C18 32GB

Corsair CMG64GX4M2D3600C18 32GB

差异规格评论

差异

Kingston SNY1600S11-4G-EDEG 4GB

需要考虑的原因
Kingston SNY1600S11-4G-EDEG 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 31

左右 6% 更低的延时

Corsair CMG64GX4M2D3600C18 32GB

需要考虑的原因
Corsair CMG64GX4M2D3600C18 32GB

报告一个错误

更快的读取速度，GB/s

22.4 9.4

测试中的平均数值
更快的写入速度，GB/s

16.8 5.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston SNY1600S11-4G-EDEG 4GB

Corsair CMG64GX4M2D3600C18 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 31
读取速度，GB/s

9.4 22.4
写入速度，GB/s

5.1 16.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1432 4012

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-3000C15-8GVS 8GB

G Skill Intl F4-3000C15-8GVS 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3466C16-16GTZ 16GB

G Skill Intl F4-3466C16-16GTZ 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMT64GX4M4K3600C16 16GB

Corsair CMT64GX4M4K3600C16 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3200C16-8GTZSW 8GB

G Skill Intl F4-3200C16-8GTZSW 8GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

G Skill Intl F4-3200C16-8GTZN 8GB

G Skill Intl F4-3200C16-8GTZN 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-4800C19-8GTESC 8GB

G Skill Intl F4-4800C19-8GTESC 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Apacer Technology 78.CAGN4.4020B 8GB

Apacer Technology 78.CAGN4.4020B 8GB

SK Hynix CT51264AC800.C16FC 4GB

SK Hynix CT51264AC800.C16FC 4GB

G Skill Intl F4-3466C16-4GTZ 4GB

G Skill Intl F4-3466C16-4GTZ 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Crucial Technology CT16G4SFRA266.C8FB 16GB

Crucial Technology CT16G4SFRA266.C8FB 16GB