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Kingston SNY1600S11-4G-EDEG 4GB
G Skill Intl F4-3000C16-8GISB 8GB

Kingston SNY1600S11-4G-EDEG 4GB vs G Skill Intl F4-3000C16-8GISB 8GB

总分
star star star star star
Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

总分
star star star star star
G Skill Intl F4-3000C16-8GISB 8GB

G Skill Intl F4-3000C16-8GISB 8GB

差异 规格 评论

差异

Kingston SNY1600S11-4G-EDEG 4GB 需要考虑的原因
Kingston SNY1600S11-4G-EDEG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 30
    左右 3% 更低的延时
G Skill Intl F4-3000C16-8GISB 8GB 需要考虑的原因
G Skill Intl F4-3000C16-8GISB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17 left arrow 9.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 5.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston SNY1600S11-4G-EDEG 4GB
G Skill Intl F4-3000C16-8GISB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 30
  • 读取速度，GB/s
    9.4 left arrow 17.0
  • 写入速度，GB/s
    5.1 left arrow 13.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1432 left arrow 3234

Kingston SNY1600S11-4G-EDEG 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB

G Skill Intl F4-3000C16-8GISB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Inmos + 256MB
Inmos + 256MB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3200C16-8GTZSW 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Apacer Technology 78.CAGR4.DFC0B 8GB
Apacer Technology 78.CAGR4.DFC0B 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Inmos + 256MB
Inmos + 256MB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3333C16-4GRRD 4GB
G Skill Intl F4-3333C16-4GRRD 4GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Netac Technology Co Ltd E40832A 8GB
Netac Technology Co Ltd E40832A 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Corsair CMD16GX4M4A2666C16 4GB
Corsair CMD16GX4M4A2666C16 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Kingston KHX3333C16D4/16GX 16GB
Kingston KHX3333C16D4/16GX 16GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Samsung M393A8K40B21-CTC 64GB
Samsung M393A8K40B21-CTC 64GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3600C14-8GVKA 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
内存RAM