Kingston SNY1600S11-4G-EDEG 4GB vs Kingston KHX2133C13S4/16G 16GB

总分

Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

总分

Kingston KHX2133C13S4/16G 16GB

Kingston KHX2133C13S4/16G 16GB

差异规格评论

差异

Kingston SNY1600S11-4G-EDEG 4GB

需要考虑的原因
Kingston SNY1600S11-4G-EDEG 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 35

左右 17% 更低的延时

Kingston KHX2133C13S4/16G 16GB

需要考虑的原因
Kingston KHX2133C13S4/16G 16GB

报告一个错误

更快的读取速度，GB/s

13.6 9.4

测试中的平均数值
更快的写入速度，GB/s

9.4 5.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston SNY1600S11-4G-EDEG 4GB

Kingston KHX2133C13S4/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 35
读取速度，GB/s

9.4 13.6
写入速度，GB/s

5.1 9.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1432 2440

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905678-138.A00G 8GB

Samsung M4 70T5663CZ3-CE6 2GB

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Nanya Technology NT2GC64B8HC0NS-CG 2GB

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Team Group Inc. TEAMGROUP-UD3-2400 8GB

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Crucial Technology CT4G4DFS8213.C8FAR 4GB

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Kingston KHX2133C14D4/4G 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK16GX4M2F4400C19 8GB

Corsair CMK16GX4M2F4400C19 8GB

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Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3200C16-16GTZN 16GB

G Skill Intl F4-3200C16-16GTZN 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

SK Hynix HMT41GU6AFR8C-PB 8GB

SK Hynix HMT41GU6AFR8C-PB 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

SK Hynix HMA82GR8AMR4N-TF 16GB

SK Hynix HMA82GR8AMR4N-TF 16GB