Kingston XJV223-MIE-NX 16GB vs Kingston X0N6VG-HYD2 16GB

总分

Kingston XJV223-MIE-NX 16GB

Kingston XJV223-MIE-NX 16GB

总分

Kingston X0N6VG-HYD2 16GB

Kingston X0N6VG-HYD2 16GB

差异规格评论

差异

Kingston XJV223-MIE-NX 16GB

需要考虑的原因
Kingston XJV223-MIE-NX 16GB

报告一个错误

更快的读取速度，GB/s

18.7 17.3

测试中的平均数值

Kingston X0N6VG-HYD2 16GB

需要考虑的原因
Kingston X0N6VG-HYD2 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 38

左右 -27% 更低的延时
更快的写入速度，GB/s

16.1 12.7

测试中的平均数值

规格

完整的技术规格清单

Kingston XJV223-MIE-NX 16GB

Kingston X0N6VG-HYD2 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 30
读取速度，GB/s

18.7 17.3
写入速度，GB/s

12.7 16.1
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3334 3637

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Kingston 99U5584-010.A00LF 4GB

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Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266

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Patriot Memory (PDP Systems) PSD44G213382 4GB

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Samsung M3 93T5750CZA-CE6 2GB

Corsair CMH32GX4M4E3200C16 8GB

Corsair CMH32GX4M4E3200C16 8GB

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Samsung M3 78T5663RZ3-CF7 2GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB