RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
比较
Kreton Corporation 51624xxxx68x35xxxx 2GB vs Crucial Technology BLE4G4D26AFEA.8FBD 4GB
总分
Kreton Corporation 51624xxxx68x35xxxx 2GB
总分
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
差异
规格
评论
差异
需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
更快的读取速度,GB/s
4
18.2
测试中的平均数值
需要考虑的原因
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
22
59
左右 -168% 更低的延时
更快的写入速度,GB/s
14.1
1,855.7
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
59
22
读取速度,GB/s
4,168.0
18.2
写入速度,GB/s
1,855.7
14.1
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
680
3012
Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较
Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB
V-GEN D4H8GL32A8TS 8GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-2133C15-8GFXR 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
Samsung M471B5273EB0-CK0 4GB
Samsung M378A2K43CB1-CRC 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
Samsung M471A5244CB0-CWE 4GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
SK Hynix HMT451U7BFR8C-RD 4GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3000C16-16GTZN 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston HP32D4U8D8HC-16X 16GB
PNY Electronics PNY 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2400C15-8GRK 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Golden Empire CL17-17-17 D4-2400 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
报告一个错误
×
Bug description
Source link