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Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston XRMWRN-MIE 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB vs Kingston XRMWRN-MIE 16GB

总分
star star star star star
Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分
star star star star star
Kingston XRMWRN-MIE 16GB

Kingston XRMWRN-MIE 16GB

差异 规格 评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB 需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.7
    测试中的平均数值
Kingston XRMWRN-MIE 16GB 需要考虑的原因
Kingston XRMWRN-MIE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 59
    左右 -90% 更低的延时
  • 更快的写入速度，GB/s
    14.1 left arrow 1,855.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston XRMWRN-MIE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 31
  • 读取速度，GB/s
    4,168.0 left arrow 16.7
  • 写入速度，GB/s
    1,855.7 left arrow 14.1
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    680 left arrow 3402

Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB

Kingston XRMWRN-MIE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Hexon Technology Pte Ltd HEXON 1GB
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Samsung M471B1G73DB0-YK0 8GB
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内存RAM
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内存RAM
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内存RAM
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TwinMOS 8DPT5MK8-TATP 2GB
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内存RAM
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内存RAM
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内存RAM
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Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
内存RAM
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内存RAM
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Avant Technology J642GU42J7240NF 16GB
内存RAM
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Patriot Memory (PDP Systems) PSD22G6672 2GB
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Samsung V-GeN D4S8GL26A8TL5 8GB
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