Micron Technology 16JSF25664HZ-1G1F1 2GB vs Corsair CMK64GX4M4A2666C16 16GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Corsair CMK64GX4M4A2666C16 16GB

Corsair CMK64GX4M4A2666C16 16GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 35

左右 17% 更低的延时

Corsair CMK64GX4M4A2666C16 16GB

需要考虑的原因
Corsair CMK64GX4M4A2666C16 16GB

报告一个错误

更快的读取速度，GB/s

16.3 10.5

测试中的平均数值
更快的写入速度，GB/s

12.9 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Corsair CMK64GX4M4A2666C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 35
读取速度，GB/s

10.5 16.3
写入速度，GB/s

7.1 12.9
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1425 3314

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA81GU6DJR8N-XN 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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Samsung M471A1G44BB0-CWE 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-3600C14-16GTZRA 16GB

G Skill Intl F4-3600C14-16GTZRA 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

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Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Apacer Technology 78.CAGRN.40C0B 8GB

Apacer Technology 78.CAGRN.40C0B 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston 9905624-046.A00G 8GB

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Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

Corsair CMW128GX4M8C3000C16 16GB

Corsair CMW128GX4M8C3000C16 16GB